Methods of Forming Semiconductor Devices

Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide...

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Main Authors HYUN SANGJIN, LEE HYOSAN, CHOI SIYOUNG, SEO KANG-ILL, HONG HYUNG-SEOK, CHO HAGJU, NA HOONJOO, LEE HYE-LAN, PARK JUN-WOONG, SHIN YUGYUN
Format Patent
LanguageEnglish
Published 23.08.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.
Bibliography:Application Number: US201213458418