APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR CARRIER LIFETIME
In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a refle...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
09.08.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime. |
---|---|
Bibliography: | Application Number: US201013500305 |