THROUGH SILICON VIAS USING CARBON NANOTUBES

The various embodiments of the present invention provide carbon nanotube (CNT)-based TSVs and methods of making the same. The CNT-based TSVs embodiments comprise a silicon wafer having a plurality of through-vias defined therein, and a support layer comprising a CNT catalyst layer disposed beneath t...

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Bibliographic Details
Main Authors TURANO STEPHAN, READY WILLIAM JUDSON
Format Patent
LanguageEnglish
Published 09.08.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The various embodiments of the present invention provide carbon nanotube (CNT)-based TSVs and methods of making the same. The CNT-based TSVs embodiments comprise a silicon wafer having a plurality of through-vias defined therein, and a support layer comprising a CNT catalyst layer disposed beneath the silicon wafer to facilitate CNT growth through the plurality of through-vias. Once CNT arrays have grown inside and through the through-vias, the support layer and accompanying CNT catalyst layer can be removed from the silicon wafer, which will result in the CNTs remaining in the TSVs.
Bibliography:Application Number: US201213366545