PLASMA ETCHING METHOD AND COMPUTER-READABLE STORAGE MEDIUM

In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8...

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Bibliographic Details
Main Authors UEDA KOSEI, SASAKI HIKOICHIRO
Format Patent
LanguageEnglish
Published 14.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8 or less), C4F8, a rare gas and O2 is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.
Bibliography:Application Number: US201213399509