SEMICONDUCTOR DEVICE

The semiconductor device includes: a semiconductor substrate; a pair of injection elements; an active barrier structure; and a p-type ground region. The semiconductor substrate has a main surface and a p-type region formed therein. The active barrier structure is arranged in a region sandwiched betw...

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Bibliographic Details
Main Authors YOSHIHISA YASUKI, NITTA TETSUYA
Format Patent
LanguageEnglish
Published 07.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device includes: a semiconductor substrate; a pair of injection elements; an active barrier structure; and a p-type ground region. The semiconductor substrate has a main surface and a p-type region formed therein. The active barrier structure is arranged in a region sandwiched between the pair of injection elements over the main surface. The p-type ground region is a ground potential-applicable region which is formed closer to an end side of the main surface than the pair of injection elements and the active barrier structure, bypassing a region sandwiched between the pair of injection elements over the main surface, and which is electrically coupled to the p-type region. The p-type ground region is divided by a region adjacent to the region sandwiched between the pair of injection elements.
Bibliography:Application Number: US201113305418