HIGH VOLTAGE RESISTOR

Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the fi...

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Bibliographic Details
Main Authors SU RU-YI, LIU RUEY-HSIN, YAO CHIH-WEN (ALBERT), YANG FUIH, TSAI CHUN LIN, CHENG CHIHANG
Format Patent
LanguageEnglish
Published 19.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities.
Bibliography:Application Number: US20100905840