Low Temperature Synthesis of Nanowires in Solution

Methods synthesizing nanowires in solution at low temperatures (e.g., about 400° C. or lower) are provided. In the present methods, the nanowires are synthesized by exposing nanowire precursors to metal nanocrystals in a nanowire growth solution comprising a solvent. The metal nanocrystals serve as...

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Bibliographic Details
Main Authors FANFAIR DAYNE D, KORGEL BRIAN A
Format Patent
LanguageEnglish
Published 19.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods synthesizing nanowires in solution at low temperatures (e.g., about 400° C. or lower) are provided. In the present methods, the nanowires are synthesized by exposing nanowire precursors to metal nanocrystals in a nanowire growth solution comprising a solvent. The metal nanocrystals serve as seed particles that catalyze the growth of the semiconductor nanowires. The metal nanocrystals may be formed in situ in the growth solution from metal nanocrystal precursors. Alternatively, the nanowires may be pre-formed and added to the growth solution.
Bibliography:Application Number: US201113336926