METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES

The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilli...

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Bibliographic Details
Main Authors YASUKAWA TAKAMASA, PRINE LAURA, KAMEI TAKESHI, ODA YASUHIRO
Format Patent
LanguageEnglish
Published 05.04.2012
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.
Bibliography:Application Number: US20100896116