METHOD OF DAMAGE-FREE IMPURITY DOPING FOR CMOS IMAGE SENSORS

A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a seco...

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Bibliographic Details
Main Authors TAI HSINIH, LIU CHIA-YING, VENEZIA VINCENT, KU KEHIANG
Format Patent
LanguageEnglish
Published 05.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed.
Bibliography:Application Number: US20100896518