Plating process and apparatus for through wafer features

A method for forming through features in a substrate uses a seed layer deposited over a first substrate, and a second substrate bonded to the seed layer. The features may be formed in the first substrate, by plating a conductive filler material onto the seed layer. The first substrate and the second...

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Bibliographic Details
Main Authors FOSTER JOHN S, SUMMERS JEFFERY F, HARLEY JOHN C
Format Patent
LanguageEnglish
Published 05.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A method for forming through features in a substrate uses a seed layer deposited over a first substrate, and a second substrate bonded to the seed layer. The features may be formed in the first substrate, by plating a conductive filler material onto the seed layer. The first substrate and the second substrate may then be bonded to a third substrate, and the second substrate is removed, leaving through features and first substrate adhered to the third substrate. The through features may provide at least one of electrical access and motion to a plurality of devices formed on the third substrate, or may impart movement to a moveable feature on the first substrate, wherein the third substrate supports the first substrate after removal of the second substrate.
Bibliography:Application Number: US20100923693