METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

A method for manufacturing a semiconductor element includes etching a surface of a substrate by a dry etching processing, performing a first heat treatment for the surface of the substrate in an atmosphere including halogen, and forming a nitride semiconductor on the surface of the substrate.

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Bibliographic Details
Main Authors SUGAWARA NORIKAZU, KATSUMATA HIROSHI, ONDUKA SHINJI, KOUJI YOSHIHARU, HANYU HIDENORI, KATAOKA JUNJI, TERADA TOSHIYUKI
Format Patent
LanguageEnglish
Published 22.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor element includes etching a surface of a substrate by a dry etching processing, performing a first heat treatment for the surface of the substrate in an atmosphere including halogen, and forming a nitride semiconductor on the surface of the substrate.
Bibliography:Application Number: US201113226727