LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES

Embodiments provide methods for etching and depositing silicon materials on a substrate. In one example, the method includes heating a substrate containing a silicon-containing material to a temperature of about 800° C. or less and removing a portion of the silicon-containing material and a contamin...

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Bibliographic Details
Main Author SAMOILOV ARKADII V
Format Patent
LanguageEnglish
Published 22.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:Embodiments provide methods for etching and depositing silicon materials on a substrate. In one example, the method includes heating a substrate containing a silicon-containing material to a temperature of about 800° C. or less and removing a portion of the silicon-containing material and a contaminant to reveal an exposed surface of the silicon-containing material during an etching process and depositing a silicon-containing layer on the exposed surface of the silicon-containing material during a deposition process. The method further provides conducting the etching and deposition processes in the same chamber and utilizing chlorine gas and a silicon source gas during the etching and deposition processes. In some examples, the silicon-containing material is removed at a rate within a range from about 2 per minute to about 20 per minute during the etching process.
Bibliography:Application Number: US201113305235