SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating a semiconductor device includes forming a high-dielectric constant insulating film including a high-dielectric constant film; forming a first conductive film including an oxide film on an upper surface thereof and containing at least one of high melting point metal or a comp...

Full description

Saved in:
Bibliographic Details
Main Author MAKITA TSUYOSHI
Format Patent
LanguageEnglish
Published 22.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for fabricating a semiconductor device includes forming a high-dielectric constant insulating film including a high-dielectric constant film; forming a first conductive film including an oxide film on an upper surface thereof and containing at least one of high melting point metal or a compound thereof; forming a second conductive film containing silicon on the first conductive film with the oxide film being interposed therebetween; forming a mixing layer by performing ion implantation to the first and second conductive films to mix a constituent material of the oxide film and silicon of the second conductive film together; and forming the mixing layer into a conductive layer by performing heat treatment.
Bibliography:Application Number: US201113305444