Method and Apparatus for Reducing Read Disturb in Memory

• Main Authors: LIU TSENG-YI, HUNG CHUN HSIUNG, HUNG SHUO-NAN
• Format: Patent
• Language: English
• Published: 15.03.2012
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Various aspects of a NAND memory include a control circuit that applies a read bias arrangement to a plurality of word lines to read a selected data value stored on a plurality of memory cells by measuring current flowing between the first end and the second end of the series of memory cells. The re...