MEMORY CELL WRITE

Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary...

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Bibliographic Details
Main Authors SIERS SCOTT E, DAMARAJU SATISH K, AHMED AK R
Format Patent
LanguageEnglish
Published 16.02.2012
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.
Bibliography:Application Number: US201113282331