LIGHT EMITTING DEVICES WITH EMBEDDED VOID-GAP STRUCTURES THROUGH BONDING OF STRUCTURED MATERIALS ON ACTIVE DEVICES

A method of fabricating optoelectronic devices with embedded void-gap structures on semiconductor layers through bonding is provided. The embedded void-gaps are fabricated on a semiconductor structure by bonding a patterned layer or slab onto a flat surface, or by bonding a flat layer or slab onto a...

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Bibliographic Details
Main Authors WEISBUCH CLAUDE C. A, MATIOLI ELISON DE NAZARETH, SPECK JAMES S
Format Patent
LanguageEnglish
Published 26.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating optoelectronic devices with embedded void-gap structures on semiconductor layers through bonding is provided. The embedded void-gaps are fabricated on a semiconductor structure by bonding a patterned layer or slab onto a flat surface, or by bonding a flat layer or slab onto a patterned surface. The void-gaps can be filled with air, gases, conductive or dielectric materials, or other substances, in order to provide better isolation of optical modes from dissipative regions, or better light extraction properties.
Bibliography:Application Number: US20100871644