METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING METALLIZATION COMPRISING SELECT LINES, BIT LINES AND WORD LINES
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the f...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
12.01.2012
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region. |
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Bibliography: | Application Number: US201113236000 |