THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a three-dimensional semiconductor memory includes forming a plurality of stacked structures disposed on a substrate to be spaced apart from each other, each of the stacked structures including a plurality of dielectric patterns and a plurality of polysilicon patterns alter...

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Bibliographic Details
Main Authors JO SEON-HO, HWANG KIHYUN, LEE CHANGWON, KIM SUNGGIL, LEE JEONGGIL, LEE SUN WOO, YANG JUNKYU, CHOI HANMEI
Format Patent
LanguageEnglish
Published 15.12.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a three-dimensional semiconductor memory includes forming a plurality of stacked structures disposed on a substrate to be spaced apart from each other, each of the stacked structures including a plurality of dielectric patterns and a plurality of polysilicon patterns alternately stacked, forming a metal layer to cover sidewalls of the stacked structures and a top surface of the substrate exposed between the stacked structures, and forming stacked gate electrodes on the substrate and a conductive line in the substrate by performing a silicidation process between the metal layer and each of the polysilicon patterns and the substrate.
Bibliography:Application Number: US201113157659