INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME

• Main Authors: HU HSIEN-PIN, CHEN MING-FA, KUO CHIN-WEI, LU JHEING, LIU SALLY, YEN HSIAO-TSUNG
• Format: Patent
• Language: English
• Published: 08.12.2011
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION OF NOISE BY SUCH CIRCUITS; GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER; SEMICONDUCTOR DEVICES

A three-dimensional integrated circuit includes a semiconductor substrate where the substrate has an opening extending through a first surface and a second surface of the substrate and where the first surface and the second surface are opposite surfaces of the substrate. A conductive material substantially fills the opening of the substrate to form a conductive through-substrate-via (TSV). An active circuit is disposed on the first surface of the substrate, an inductor is disposed on the second surface of the substrate and the TSV is electrically coupled to the active circuit and the inductor. The three-dimensional integrated circuit may include a varactor formed from a dielectric layer formed in the opening of the substrate such that the conductive material is disposed adjacent the dielectric layer and an impurity implanted region disposed surrounding the TSV such that the dielectric layer is formed between the impurity implanted region and the TSV.