Semiconductor Device Having Magnetoresistive Element and Manufacturing Method Thereof

• Main Authors: FUKUI SHOICHI, OMORI KAZUYUKI, IIDA SATOSHI, MAEJIMA SHINROKU
• Format: Patent
• Language: English
• Published: 08.12.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device has a magnetoresistive element, a bit line over the magnetoresistive element, and a yoke cover over the bit line. To form the yoke cover, a laminate film is first formed over the bit line, the laminate film having a first barrier metal layer, a magnetic layer, and a second barrier metal layer which are formed successively over the bit line. Then, the laminate film is subjected to: reactive ion etching with a gas mixture of a carbon tetrafluoride (CF4) gas and an argon (Ar) gas, reactive ion etching with a gas mixture of carbon monoxide (CO), an ammonia (NH3) gas, and an argon (Ar) gas, and reactive ion etching with a gas mixture of a carbon tetrafluoride (CF4) gas and an argon (Ar) gas.