Semiconducture Structure and Method of Forming the Semiconductor Structure that Provides Two Individual Resistors or a Capacitor

A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capac...

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Bibliographic Details
Main Author KLATT JEFFREY
Format Patent
LanguageEnglish
Published 01.12.2011
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Summary:A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same process flow.
Bibliography:Application Number: US20100789539