Semiconducture Structure and Method of Forming the Semiconductor Structure that Provides Two Individual Resistors or a Capacitor
A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capac...
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Main Author | |
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Format | Patent |
Language | English |
Published |
01.12.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same process flow. |
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Bibliography: | Application Number: US20100789539 |