FIELD EFFECT TRANSISTOR WITH TRENCH FILLED WITH INSULATING MATERIAL AND STRIPS OF SEMI-INSULATING MATERIAL ALONG TRENCH SIDEWALLS
In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls o...
Saved in:
| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
24.11.2011
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material may be insulated from the first semiconductor region. |
|---|---|
| AbstractList | In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material may be insulated from the first semiconductor region. |
| Author | WILSON PETER H SAPP STEVEN |
| Author_xml | – fullname: SAPP STEVEN – fullname: WILSON PETER H |
| BookMark | eNqNjL0KwjAURjPo4N87XHAu2GpBx9Dc2AtpKrkpHUuROElbqC_gm1uwo4PTx_k4nLVYdH0XVuKtCY0C1BozD95Jy8S-dFCTzydGm-WgyRhU34ssV0Z6slcopEdH0oC0Ctg7ujGUGhgLin5qppxwbjIprKUxvBXLR_scw27ejdhr9FkehaFvwji099CFV1Nxcojj5Hy6pKmMj_9ZH0B_P1k |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US2011284955A1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US2011284955A13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 16:54:19 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US2011284955A13 |
| Notes | Application Number: US201113114253 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111124&DB=EPODOC&CC=US&NR=2011284955A1 |
| ParticipantIDs | epo_espacenet_US2011284955A1 |
| PublicationCentury | 2000 |
| PublicationDate | 20111124 |
| PublicationDateYYYYMMDD | 2011-11-24 |
| PublicationDate_xml | – month: 11 year: 2011 text: 20111124 day: 24 |
| PublicationDecade | 2010 |
| PublicationYear | 2011 |
| RelatedCompanies | FAIRCHILD SEMICONDUCTOR CORPORATION WILSON PETER H SAPP STEVEN |
| RelatedCompanies_xml | – name: FAIRCHILD SEMICONDUCTOR CORPORATION – name: SAPP STEVEN – name: WILSON PETER H |
| Score | 2.8312252 |
| Snippet | In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | FIELD EFFECT TRANSISTOR WITH TRENCH FILLED WITH INSULATING MATERIAL AND STRIPS OF SEMI-INSULATING MATERIAL ALONG TRENCH SIDEWALLS |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111124&DB=EPODOC&locale=&CC=US&NR=2011284955A1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwEA9jivqmU_FjSkDpW7Fu6WYfhnRNaiNdO5rU7W30EwTphqv47H_utW66BxnkIcmFg0u4y-8uyQWh2_skSjt6rKkkjXKVZHlfNRJNU6MoJpmWRwlJqxPdkddzQvI81acN9LZ-C1PnCf2skyOCRiWg72Vtrxd_QSxa361c3sWv0DV_tOWAKuk63AfwgSh0OGBjn_qWYlmDUCheUNPAEhu6boKvtANAul_pA3sZVu9SFpubin2IdsfAryiPUCMrWmjfWv-91kJ7o9WRN1RX2rc8Rl82Zy7FAC2ZJbEMTE9wIf0AT7h0oM08y8E2uOeM_nSBZx66puTeEx6ZgFu56WLTo1jIgI8F9m0sYBnUf4e5PjRXPAWnbGK6rjhBNzaTlqOCLLPfqZuFYlPw7ilqFvMiO0O41yUJITmB1akyzEQPRkdPY6NnJDogmqx7jtrbOF1sJ1-igzr2CqVD2qhZvn9kV7B5l_F1PeffPaOT0w |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwEA9jivNNp-LH1IDSt2Ld0s0-DOma1lbTdjSp8230EwTphqv47H_utW66BxnkIcmFg0u4y-8uyQWh69skSrtqrMgkjXKZZPlA1hJFkaMoJpmSRwlJqxNd1-vbIXl8UV8a6G31FqbOE_pZJ0cEjUpA38vaXs__gli0vlu5uIlfoWt2b4khldJVuA_gA5HoaGiOfeobkmEMQy55QU0DS6ypqg6-0haA7EGlD-bzqHqXMl_fVKw9tD0GfkW5jxpZ0UYtY_X3WhvtuMsjb6gutW9xgL4sx2QUA7Q0DYFFoHvc4cIP8MQRNrRNz7CxBe65SX-6wDMPmS4c7wG7OuBWR2dY9yjmInDGHPsW5rAM8r_DmA_NJU_uUHOiM8YP0ZVlCsOWQZbp79RNQ74ueO8INYtZkR0j3O-RhJCcwOpUGWaiO62rprHW1xIVEE3WO0GdTZxON5MvUcsWLpsyx3s6Q7t1HBZKl3RQs3z_yM5hIy_ji3r-vwFawpbG |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=FIELD+EFFECT+TRANSISTOR+WITH+TRENCH+FILLED+WITH+INSULATING+MATERIAL+AND+STRIPS+OF+SEMI-INSULATING+MATERIAL+ALONG+TRENCH+SIDEWALLS&rft.inventor=SAPP+STEVEN&rft.inventor=WILSON+PETER+H&rft.date=2011-11-24&rft.externalDBID=A1&rft.externalDocID=US2011284955A1 |