FIELD EFFECT TRANSISTOR WITH TRENCH FILLED WITH INSULATING MATERIAL AND STRIPS OF SEMI-INSULATING MATERIAL ALONG TRENCH SIDEWALLS

In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls o...

Full description

Saved in:
Bibliographic Details
Main Authors SAPP STEVEN, WILSON PETER H
Format Patent
LanguageEnglish
Published 24.11.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material may be insulated from the first semiconductor region.
Bibliography:Application Number: US201113114253