SOLUTION FOR INCREASING WAFER SHEET RESISTANCE AND/OR PHOTOVOLTAIC CELL POWER DENSITY LEVEL

Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least o...

Full description

Saved in:
Bibliographic Details
Main Authors OOSTERHOLT JOHANNES A.E, GROENEWOUD LUCAS M.H, RITMEIJER SABRINA, HOOGBOOM JOANNES T.V
Format Patent
LanguageEnglish
Published 10.11.2011
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
TRANSMISSION
Online AccessGet full text

Cover

More Information
Summary:Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least one of (a) the sheet resistance in the wafer and (b) the power density level of the photovoltaic cell made from said wafer. The treatment solution being an acidic treatment solution of a buffered oxide etch (BOE) solution of at least one tetraalkylammonium hydroxide, acetic acid, at least one non-ionic surfactant, at least one metal chelating agent, a metal free source of ammonia, a metal free source, of fluoride ions, and water, mixed with an oxidizer solution and optionally water.
Bibliography:Application Number: US201013138144