ALD PROCESSING TECHNIQUES FOR FORMING NON-VOLATILE RESISTIVE-SWITCHING MEMORIES

ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least on...

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Bibliographic Details
Main Authors PHATAK PRASHANT, KUMAR PRAGATI, FUCHIGAMI NOBI
Format Patent
LanguageEnglish
Published 03.11.2011
Subjects
ELECTRICITY
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Summary:ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.
Bibliography:Application Number: US201113184335