METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL
A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block i...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
03.11.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis. |
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Bibliography: | Application Number: US201113087431 |