METHODS FOR ETCHING SILICON-BASED ANTIREFLECTIVE LAYERS

Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned p...

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Bibliographic Details
Main Authors ZHOU YIFENG, PENDER JEREMIAH T, ZHOU QINGJUN, ARMACOST MICHAEL D, PATZ RYAN
Format Patent
LanguageEnglish
Published 20.10.2011
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
SEMICONDUCTOR DEVICES
THEIR RELEVANT APPARATUS
TRANSPORTING
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Summary:Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl2).
Bibliography:Application Number: US20100896389