MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE

A low-temperature protective layer having AlN is grown on a rare earth perovskite substrate and a first GaN based semiconductor layer having Alx1Ga1-x1N where composition x1 of Al is 0.40 x1 0.45 is grown thereon. Then, a second GaN semiconductor layer having Alx2Ga1-x2N where composition x2 of Al i...

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Bibliographic Details
Main Authors YOSHIDA TAKU, TAKAKUSAKI MISAO, MORIOKA SATORU, MIKAMI MAKOTO
Format Patent
LanguageEnglish
Published 06.10.2011
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A low-temperature protective layer having AlN is grown on a rare earth perovskite substrate and a first GaN based semiconductor layer having Alx1Ga1-x1N where composition x1 of Al is 0.40 x1 0.45 is grown thereon. Then, a second GaN semiconductor layer having Alx2Ga1-x2N where composition x2 of Al is 0 x2 0.45 is grown on the first GaN based semiconductor layer.
Bibliography:Application Number: US201113075659