TEMPERATURE SENSOR AND MANUFACTURING METHOD OF TEMPERATURE SENSOR

A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well...

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Bibliographic Details
Main Authors IWAKI TAKAO, TAKEUCHI YUKIHIRO, WADO HIROYUKI
Format Patent
LanguageEnglish
Published 22.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well structural part includes a plurality of semiconductor layers made of the elements. The semiconductor layers include a plurality of quantum barrier layers and a quantum well layer disposed between the quantum barrier layers. When the semiconductor substrate has a lattice constant "a," each of the quantum barrier layers has a lattice constant "b," and the quantum well layer has a lattice constant "c," the semiconductor substrate, the quantum barrier layers, and the quantum well layer satisfy a relationship of b<a<c or c<a<b.
Bibliography:Application Number: US201113043842