NITRIDE SEMICONDUCTOR DEVICE

An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a...

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Bibliographic Details
Main Authors TAKIZAWA TOSHIYUKI, UEDA TETSUZO
Format Patent
LanguageEnglish
Published 01.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.
Bibliography:Application Number: US201113105337