NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance elem...

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Bibliographic Details
Main Authors BABA MASANOBU, NAKAI TSUKASA, NOMACHI AKIKO, NOJIRI YASUHIRO, KISHIDA MOTOYA, KUBOI SHUICHI, FUKUMIZU HIROYUKI
Format Patent
LanguageEnglish
Published 25.08.2011
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance element; and a negative resistance element connected in series to the variable resistance element.
Bibliography:Application Number: US20100882822