METHOD FORMING METAL FILM AND SEMICONDUCTOR FABRICATION DEVICE HAVING METAL FILM

A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on t...

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Bibliographic Details
Main Authors CHOI GIL-HEYUN, JUNG EUN-JI, KIM BYUNG-HEE, SOHN WOONG-HEE, KIM SU-KYOUNG
Format Patent
LanguageEnglish
Published 18.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.
Bibliography:Application Number: US20100955093