PHASE CHANGE MEMORY

A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a wi...

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Bibliographic Details
Main Authors RYOO KYUNGANG, SONG YOON-JONG, KIM BYUNG-SEO
Format Patent
LanguageEnglish
Published 11.08.2011
Subjects
ELECTRICITY
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Summary:A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.
Bibliography:Application Number: US201113092725