PROCESS FOR FORMING SCHOTTKY RECTIFIER WITH PtNi SILICIDE SCHOTTKY BARRIER

A process for forming a Schottky barrier to silicon to a bather height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop the first film. The two films...

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Bibliographic Details
Main Authors CARTA ROSSANO, SANFILIPPO CARMELO
Format Patent
LanguageEnglish
Published 30.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for forming a Schottky barrier to silicon to a bather height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop the first film. The two films are then exposed to anneal steps at suitable temperatures to cause their interdiffusion and a ultimate formation of Ni2Si and Pt2Si contacts to the silicon surface. The final silicide has a barrier height between that of the Pt and Ni, and will depend on the initial thicknesses of the Pt and Ni films and annealing temperature and time. Oxygen is injected into the system to form an SiO2 passivation layer to improve the self aligned process.
Bibliography:Application Number: US20100831098