POLYCRYSTALLINE SIC ELECTRICAL DEVICES AND METHODS FOR FABRICATING THE SAME

The present invention relates to a novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precur...

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Bibliographic Details
Main Author COLOPY CURTIS M
Format Patent
LanguageEnglish
Published 23.06.2011
Subjects
ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
TREATMENT OF NATURAL STONE
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Summary:The present invention relates to a novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precursor resins to substantially mask the deleterious effects of trace contaminants, typically nitrogen and aluminum, while reducing operative porosity and enhancing manufacturing ease.
Bibliography:Application Number: US20100850496