MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD
The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathod...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
03.03.2011
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate. |
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Bibliography: | Application Number: US20100883490 |