NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0 x1 1, 0 y1 1, and 0 x1+y1 1), a multiple quantum well-structured active layer made of undoped InA...

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Bibliographic Details
Main Authors OH JEONG TAK, LEE KYU HAN, KIM JE WON, KIM DONG JOON, KIM SUN WOON, PARK JIN SUB
Format Patent
LanguageEnglish
Published 17.02.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0 x1 1, 0 y1 1, and 0 x1+y1 1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0 y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3 1, 0 y3 1, and 0<x3+y3 1) formed on the first layer.
Bibliography:Application Number: US20100911320