METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: CHAE KWANG KEE, LEE YOUNG BANG, MOON OK MIN
• Format: Patent
• Language: English
• Published: 03.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.