METHOD FOR DEPOSITION A FILM ONTO A SUBSTRATE

• Main Authors: BRENDEL UWE, DITTRICH HERBERT, BASCH ANGELIKA, TOPA DAN, SCHIMPER HERMANN-JOSEF, STADLER ANDREAS
• Format: Patent
• Language: English
• Published: 06.01.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed is a method for depositing a film onto a substrate, with a sputter deposition process wherein the sputter deposition process is a direct current sputter deposition wherein the film consists of at least 90 wt-% of an inorganic material having semiconductor properties whereby the film of the inorganic material M2 is directly deposited as crystalline structure, so that at least 50 wt-% of the deposited film has a crystalline structure wherein the source material (target) used for the sputter deposition consists of at least 80 wt-% of the inorganic material M2. wherein the inorganic material is selected from a group including binary, ternary, and quaternary compounds including sulphur, selenium, tellurium, indium, and/or germanium.