Semiconductor device and method of manufacturing thereof

A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrod...

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Bibliographic Details
Main Authors YAMAKAWA KOJI, YAMAZAKI SOICHI
Format Patent
LanguageEnglish
Published 30.12.2010
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Summary:A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.
Bibliography:Application Number: US20100923117