METHOD FOR INSPECTING PHOTORESIST PATTERN

A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist...

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Bibliographic Details
Main Authors SUN CHIAN, SHENG YIUNG, HSUEH SHENG-YUAN
Format Patent
LanguageEnglish
Published 25.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist pattern, and a PN junction exists in the first doping region. Thereafter, a current passing through the PN junction is tested to inspect the photoresist pattern.
Bibliography:Application Number: US20090468063