METHOD FOR INSPECTING PHOTORESIST PATTERN
A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
25.11.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist pattern, and a PN junction exists in the first doping region. Thereafter, a current passing through the PN junction is tested to inspect the photoresist pattern. |
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Bibliography: | Application Number: US20090468063 |