SEMICONDUCTOR DEVICE
A semiconductor device using one or more guard rings includes a p-type guard ring region surrounding a pn junction region, an insulating film covering the p-type guard ring region, one or more conductive films electrically connected with the p-type guard ring region through one or more contact holes...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
18.11.2010
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A semiconductor device using one or more guard rings includes a p-type guard ring region surrounding a pn junction region, an insulating film covering the p-type guard ring region, one or more conductive films electrically connected with the p-type guard ring region through one or more contact holes made in the insulating film, and a semi-insulating film covering the insulating film and the conductive films. Thus, a desired breakdown voltage characteristic can be ensured even if a foreign matter or the like adheres to a surface of the conductive films. |
---|---|
Bibliography: | Application Number: US20090650957 |