IMPRINT LITHOGRAPHY APPARATUS AND METHOD

• Main Authors: IOSAD NIKOLAY, MAURY PASCALE ANNE
• Format: Patent
• Language: English
• Published: 07.10.2010
• Subjects: AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.