CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING A RESIST PATTERN USING THE SAME

• Main Authors: MASUJIMA MASAHIRO, KUMAGAI TOMOYA, KOSHIYAMA JUN
• Format: Patent
• Language: English
• Published: 30.09.2010
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; CANDLES; CHEMISTRY; CINEMATOGRAPHY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; RECOVERY OF GLYCEROL; RESIN SOAPS; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

Provided are a cleaning liquid for lithography capable of suppressing occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. A cleaning liquid for lithography containing (A) an anionic surfactant, (B) an amine compound, and (C) water. In the cleaning liquid for lithography of the present invention, the anionic surfactant and the amine compound form a salt in the cleaning liquid for lithography, and thus penetration of the anionic surfactant into a resist film can be suppressed. Therefore, even when a method for forming a resist pattern is performed, the resist film is not dissolved by using the cleaning liquid for lithography of the present invention, whereby occurrence of CD shift can be efficiently suppressed.