DUAL PORT MEMORY DEVICE

A multi-port memory device having a storage node, a precharge node, a first, second, third, and fourth transistor, and a control module. The first transistor includes a current electrode connected to the storage node, another current electrode connected to a first bit line, and a gate connected to a...

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Bibliographic Details
Main Authors CHILDS LAWRENCE F, LU OLGA R, LISTON THOMAS W
Format Patent
LanguageEnglish
Published 16.09.2010
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A multi-port memory device having a storage node, a precharge node, a first, second, third, and fourth transistor, and a control module. The first transistor includes a current electrode connected to the storage node, another current electrode connected to a first bit line, and a gate connected to a first wordline. The second transistor includes a current electrode connected to the storage node, another current electrode connected to a second bit line, and a gate connected to a second wordline. The third transistor includes a current electrode connected to the reference node, another current electrode connected to the first bit line, and a gate. The fourth transistor includes a current electrode connected to the precharge node, another current electrode connected to the second bit line, and a gate. The control module deactivates the fourth transistor in response to a dummy access of the first storage module at the second transistor.
Bibliography:Application Number: US20090404892