SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• Main Authors: JUN MYUNG-SIM, ROH TAE-MOON, NOH TAE-GON, JANG MOON-GYU
• Format: Patent
• Language: English
• Published: 24.06.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS; TRANSPORTING

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first quantum dot, and a first gate electrode on the charge storage gate, the charge storage gate exchanging charges with the first quantum dot, the first gate electrode adjusting electric potential of the first quantum dot; and a single electron transistor including a second quantum dot below the first quantum dot, a source, a drain, and a second gate electrode below the second quantum dot, the second quantum dot being capacitively coupled to the first quantum dot, the source contacting one side of the second quantum dot, the drain contacting the other side facing the one side, the second gate electrode adjusting electric potential of the second quantum dot.