FILM FORMATION METHOD IN VERTICAL BATCH CVD APPARATUS

• Main Authors: NODERA NOBUTAKE, HASEBE KAZUHIDE, MATSUNAGA MASANOBU
• Format: Patent
• Language: English
• Published: 03.06.2010
• Subjects: APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; SPRAYING OR ATOMISING IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.