SILICON NITRIDE-MELILITE COMPOSITE SINTERED BODY AND DEVICE UTILIZING THE SAME

A silicon nitride-melilite composite sintered body in accordance with the invention includes silicon nitride and a melilite Me2Si3O3N4, where Me denotes a metal element combining with silicon nitride to generate the melilite. The silicon nitride-melilite composite sintered body contains Si in a rang...

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Bibliographic Details
Main Authors TOSA AKIFUMI, MAEDA TETSUYA, SAWAMURA TAKENORI, HARA YASUSHI
Format Patent
LanguageEnglish
Published 27.05.2010
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Summary:A silicon nitride-melilite composite sintered body in accordance with the invention includes silicon nitride and a melilite Me2Si3O3N4, where Me denotes a metal element combining with silicon nitride to generate the melilite. The silicon nitride-melilite composite sintered body contains Si in a range of 41 to 83 mole percent in Si3N4 equivalent and Me in a range of 13 to 50 mole percent in oxide equivalent. The silicon nitride-melilite composite sintered body has an average thermal expansion coefficient that is arbitrarily adjustable in a range of 2 to 6 ppm/K at temperatures of 23 to 150° C. The silicon nitride-melilite composite sintered body has a high Young's modulus, a high mechanical strength, and excellent sintering performance. A device used for inspection of semiconductor in accordance with the invention utilizes such a silicon nitride-melilite composite sintered body.
Bibliography:Application Number: US20090616514