SYSTEMS AND METHODS FOR TRIMMING BANDGAP OFFSET WITH BIPOLAR DIODE ELEMENTS

An integrated circuit has an untrimmed bandgap generation circuit; and a bandgap generation circuit coupled to the untrimmed bandgap generation circuit. The bandgap generation circuit has a current source controlled by the untrimmed bandgap generation circuit and coupled in series with a resistor an...

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Bibliographic Details
Main Authors LE MINH, MARTIN WOOWAI
Format Patent
LanguageEnglish
Published 20.05.2010
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Summary:An integrated circuit has an untrimmed bandgap generation circuit; and a bandgap generation circuit coupled to the untrimmed bandgap generation circuit. The bandgap generation circuit has a current source controlled by the untrimmed bandgap generation circuit and coupled in series with a resistor and a first bipolar diode device, one or more of bipolar diode devices, each bipolar diode device coupled in parallel with the first bipolar diode device, wherein a trimmed bandgap reference voltage output of the integrated circuit is a function of the number of bipolar diode devices.
Bibliography:Application Number: US20090613284