SYSTEMS AND METHODS FOR TRIMMING BANDGAP OFFSET WITH BIPOLAR DIODE ELEMENTS
An integrated circuit has an untrimmed bandgap generation circuit; and a bandgap generation circuit coupled to the untrimmed bandgap generation circuit. The bandgap generation circuit has a current source controlled by the untrimmed bandgap generation circuit and coupled in series with a resistor an...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
20.05.2010
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated circuit has an untrimmed bandgap generation circuit; and a bandgap generation circuit coupled to the untrimmed bandgap generation circuit. The bandgap generation circuit has a current source controlled by the untrimmed bandgap generation circuit and coupled in series with a resistor and a first bipolar diode device, one or more of bipolar diode devices, each bipolar diode device coupled in parallel with the first bipolar diode device, wherein a trimmed bandgap reference voltage output of the integrated circuit is a function of the number of bipolar diode devices. |
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Bibliography: | Application Number: US20090613284 |